may.2011.version1.2 mag nachipsemiconductorltd . 1 MDV1527Csinglenchanneltrenchmosfet30v absolutemaximu m ratings(ta=25 o c) characteristics symbol rating unit drainsourcevoltage v dss 30 v gatesourcevoltage v gss 20 v continuousdraincurrent (1) t c =25 o c(siliconlimited) i d 29.0 a t c =25 o c(packagelimited) 20 t c =70 o c 20 t a =25 o c 11.0 (3) t a =70 o c 8.8 (3) pulseddraincurrent i dm 60 a powerdissipation t c =25 o c p d 23.5 w t c =70 o c 15.0 t a =25 o c 3.4 (3) t a =70 o c 2.2 (3) singlepulseavalancheenergy (2) e as 23 mj junctionandstoragetemperaturerange t j ,t stg 55~150 o c thermalcharacteristics characteristics symbol rating unit thermalresistance,junctiontoambient (1) r ja 36 o c/w thermalresistance,junctiontocase r jc 5.3 MDV1527 singlenchanneltrenchmosfet30v,20a,15.9m features v ds =30v i d =20a@v gs =10v r ds(on) <15.9m @v gs =10v <23.7m @v gs =4.5v 100%uiltested 100%rgtested generaldescription theMDV1527usesadvancedmagnachip smosfet technology,whichprovideshighperformanceinons tate resistance,fastswitchingperformanceandexcellen t quality. MDV1527issuitablefordc/dcconvertera nd generalpurposeapplications. d g s pdfn33 s s s g g s s s d d d d d d d d
may.2011.version1.2 mag nachipsemiconductorltd . 2 MDV1527Csinglenchanneltrenchmosfet30v orderinginformation partnumber temp.range package packing quantity ro hsstatus MDV1527urh 55~150 o c powerdfn33 tape&reel 5000units halogenfree electricalcharacteristics(t j = 25 o c) characteristics symbol testcondition min typ max u nit staticcharacteristics drainsourcebreakdownvoltage bv dss i d =250a,v gs =0v 30 v gatethresholdvoltage v gs(th) v ds =v gs ,i d =250a 1.3 1.9 2.7 draincutoffcurrent i dss v ds =30v,v gs =0v 1 a t j =55 o c 5 gateleakagecurrent i gss v gs =20v,v ds =0v 0.1 drainsourceonresistance r ds(on) v gs =10v,i d =8a 13.8 15.9 m t j =125 o c 20.0 23.1 v gs =4.5v,i d =7a 19.7 23.7 forwardtransconductance g fs v ds =5v,i d =8a 13.5 s dynamiccharacteristics totalgatecharge q g(10v) v ds =15.0v,i d =8a, v gs =10v 5.6 7.9 10.3 nc totalgatecharge q g(4.5v) 2.7 3.8 5.0 gatesourcecharge q gs 1.6 gatedraincharge q gd 1.3 inputcapacitance c iss v ds =15.0v,v gs =0v, f=1.0mhz 345 493 641 pf reversetransfercapacitance c rss 33 46 60 outputcapacitance c oss 69 98 128 turnondelaytime t d(on) v gs =10v,v ds =15.0v, i d =8a,r g =3.0 5.4 ns risetime t r 3.2 turnoffdelaytime t d(off) 14.8 falltime t f 3.0 gateresistance r g f=1mhz 1.0 2.8 5.0 drainsourcebodydiodecharacteristics sourcedraindiodeforwardvoltage v sd i s =8a,v gs =0v 0.84 1.1 v bodydiodereverserecoverytime t rr i f =8a,dl/dt=100a/s 16.8 25.2 ns bodydiodereverserecoverycharge q rr 8.4 12.6 nc note: 1.surfacemountedfr4boardbyjedec(jesd517) 2.e as istestedatstartingtj=25 ,l=0.1mh,i as =11.6a,v dd =27v,v gs =10v 3.t<10sec
may.2011.version1.2 mag nachipsemiconductorltd . 3 MDV1527Csinglenchanneltrenchmosfet30v
may.2011.version1.2 mag nachipsemiconductorltd . 4 MDV1527Csinglenchanneltrenchmosfet30v fig.5transfercharacteristics fig.1onregioncharacteristics fig.2on resistancevariationwith draincurrentandgatevoltage fig.3on resistancevariationwith temperature fig.4on resistancevariationwith gatetosourcevoltage fig.6 body diode forward voltage variation with source current and temperature 50 25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 v gs =10v i d =8a r ds(on) ,(normalized) drainsourceonresistance t j ,junctiontemperature[ o c] 2 4 6 8 10 0 10 20 30 40 notes: i d =8.0a t a =25 r ds(on) [m ], drainsourceonresistance v gs ,gatetosourcevolatge[v] 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 10 1 10 0 10 1 t a =25 notes: v gs =0v i dr ,reversedraincurrent[a] v sd ,sourcedrainvoltage[v] 0 1 2 3 4 5 0 4 8 12 16 v gs ,gatesourcevoltage[v] t a =25 notes: v ds =5v i d ,draincurrent[a] 0.0 0.5 1.0 1.5 2.0 0 5 10 15 20 8.0v 4.5v 3.5v v gs =10v 5.0v 4.0v 3.0v i d ,draincurrent[a] v ds ,drainsourcevoltage[v] 5 10 15 20 5 10 15 20 25 30 v gs =10v v gs =4.5v drainsourceonresistance[m ] i d ,draincurrent[a]
may.2011.version1.2 mag nachipsemiconductorltd . 5 MDV1527Csinglenchanneltrenchmosfet30v fig.7gatechargecharacteristics fig.8capacitancecharacteristics fig.9maximumsafeoperatingarea fig.10 maximum drain current v s. casetemperature fig.11 transient thermal response curve 0 2 4 6 8 10 0 2 4 6 8 10 note:i d =8a v gs ,gatesourcevoltage[v] q g ,totalgatecharge[nc] 25 50 75 100 125 150 0 10 20 30 40 i d ,draincurrent[a] t c ,casetemperature[ ] 10 4 10 3 10 2 10 1 10 0 10 1 10 2 10 3 10 3 10 2 10 1 10 0 10 1 notes: dutyfactor,d=t 1 /t 2 peakt j =p dm *z jc *r jc (t)+t c singlepulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc ,thermalresponse t 1 ,rectangularpulseduration[sec] 0 5 10 15 20 25 30 0 200 400 600 800 c iss =c gs +c gd (c ds =shorted) c oss =c ds +c gd c rss =c gd notes; 1.v gs =0v 2.f=1mhz c rss c oss c iss capacitance[pf] v ds ,drainsourcevoltage[v] 10 1 10 0 10 1 10 2 10 1 10 0 10 1 10 2 1s 100ms dc 10ms 10s operationinthisarea islimitedbyr ds(on) singlepulse t j =maxrated t c =25 i d ,draincurrent[a] v ds ,drainsourcevoltage[v]
may.2011.version1.2 mag nachipsemiconductorltd . 6 MDV1527Csinglenchanneltrenchmosfet30v packagedimension powerdfn33(3.3x3.3mm) dimensionsareinmillimeters,unlessotherwisespe cified
may.2011.version1.2 mag nachipsemiconductorltd . 7 MDV1527Csinglenchanneltrenchmosfet30v disclaimer: theproductsarenotdesignedforuseinhostileen vironments,including,withoutlimitation,aircraft ,nuclearpower generation, medical appliances, and devices or syst ems in which malfunction of any product can reasona bly be expected to result in a personal injury. sellers customers using or selling sellers products for us e in such applicationsdosoattheirownriskandagreetof ullydefendandindemnifyseller. magnachipreservestherighttochangethespecific ationsandcircuitrywithoutnoticeatanytime.ma gnachipdoesnotconsiderresponsibility for use of any circuitry other than circuitry entir ely included in a magnachip product. is a registered trademark of magnachip semiconductorltd.
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